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IXFB70N60Q2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
PLUS264 TM (IXFB) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 35A
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
36
50
12
1340
345
26
25
60
12
265
57
120
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.14 ° C /W
R thCS
Source-Drain Diode
0.15
° C /W
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
70
280
1.5
A
A
V
t rr
Q RM
I RM
I F = 25A, V GS = 0V
-di/dt = 100 A/ μ s
V R = 100 V
1.2
8.0
250
ns
μ C
A
Note: 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2 %.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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